N 通道 STripFET™ V，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics
N 通道 STripFET™ V，STMicroelectronics
STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。
得捷:
MOSFET N-CH 20V 120A POWERFLAT
欧时:
STMicroelectronics STripFET V 系列 Si N沟道 MOSFET STL120N2VH5, 120 A, Vds=20 V, 8引脚 PowerFLAT封装
贸泽:
MOSFET N-Ch 20V 0.002 Ohm 28A STripFET V MOS
艾睿:
This STL120N2VH5 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 80000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes stripfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Chip1Stop:
Trans MOSFET N-CH 20V 120A 8-Pin Power Flat T/R
Verical:
Trans MOSFET N-CH 20V 120A 8-Pin Power Flat T/R
DeviceMart:
MOSFET N-CH 20V 120A POWERFLAT56
Win Source:
MOSFET N-CH 20V 120A POWERFLAT56
通道数 1
漏源极电阻 0.002 Ω
极性 N-Channel
耗散功率 80 W
阈值电压 700 mV
漏源极电压Vds 20 V
漏源击穿电压 20 V
上升时间 60 ns
输入电容Ciss 4660pF @15VVds
额定功率Max 80 W
下降时间 55 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 80W Tc
安装方式 Surface Mount
引脚数 8
封装 PowerSMD-8
长度 4.75 mm
宽度 5.75 mm
高度 0.88 mm
封装 PowerSMD-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17