N沟道的PowerFLAT 3.3× 3.3封装40 V , 9.1米典型值, 15 A STripFETV功率MOSFET N-channel 40 V, 9.1 m typ., 15 A STripFETV Power MOSFET in a PowerFLAT 3.3 x 3.3 package
N-Channel 40V 11A Tc 2.9W Ta, 50W Tc Surface Mount PowerFlat™ 3.3x3.3
得捷:
MOSFET N-CH 40V 11A POWERFLAT
贸泽:
MOSFET N-Ch 40 V 9.1 mOhm 15 A STripFET V
艾睿:
This STL11N4LLF5 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 50000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with stripfet technology.
安富利:
Trans MOSFET N-CH 40V 11A 8-Pin PowerFLAT 3.3x3.3 T/R
Chip1Stop:
Trans MOSFET N-CH 40V 11A 8-Pin Power Flat T/R
Win Source:
MOSFET N-CH 40V 11A POWERFLAT / N-Channel 40 V 11A Tc 2.9W Ta, 50W Tc Surface Mount PowerFlat™ 3.3x3.3
通道数 1
漏源极电阻 9.7 Ω
极性 N-CH
耗散功率 50 W
阈值电压 1V ~ 2.5V
漏源极电压Vds 40 V
漏源击穿电压 40 V
连续漏极电流Ids 11A
上升时间 42 ns
输入电容Ciss 1570pF @25VVds
下降时间 5.2 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 2.9W Ta, 50W Tc
安装方式 Surface Mount
引脚数 8
封装 3X3-8
封装 3X3-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅