H2PAK N-CH 55V 180A
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics" power MOSFET can provide a solution. Its maximum power dissipation is 300000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
极性 N-CH
耗散功率 300 W
漏源极电压Vds 55 V
连续漏极电流Ids 180A
上升时间 150 ns
输入电容Ciss 6800pF @25VVds
额定功率Max 300 W
下降时间 50 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Surface Mount
引脚数 7
封装 TO-263-7
封装 TO-263-7
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free