N 通道 MDmesh™，600V/650V，STMicroelectronics### MOSFET 晶体管，STMicroelectronics
N 通道 MDmesh™，600V/650V，STMicroelectronics
得捷:
MOSFET N-CH 600V 29A D2PAK
欧时:
### N 通道 MDmesh™，600V/650V，STMicroelectronics### MOSFET 晶体管，STMicroelectronics
贸泽:
MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS
艾睿:
If you need to either amplify or switch between signals in your design, then STMicroelectronics&s; STB34NM60N power MOSFET is for you. Its maximum power dissipation is 210000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh ii technology.
安富利:
Trans MOSFET N-CH 600V 29A 3-Pin2+Tab D2PAK T/R
Verical:
Trans MOSFET N-CH 600V 31.5A 3-Pin2+Tab D2PAK T/R
力源芯城:
600V,31.5A,N沟道MOSFET
DeviceMart:
MOSFET N-CH 600V 29A D2PAK
漏源极电阻 0.092 Ω
极性 N-Channel
耗散功率 210 W
阈值电压 3 V
漏源极电压Vds 600 V
连续漏极电流Ids 29A
上升时间 34 ns
输入电容Ciss 2722pF @100VVds
下降时间 70 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 250W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.4 mm
宽度 9.35 mm
高度 4.6 mm
封装 TO-263-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17