STMICROELECTRONICS STL15DN4F5 双路场效应管, MOSFET, 双N沟道, 15 A, 40 V, 0.008 ohm, 10 V, 2 V
N 通道 STripFET™ 双 MOSFET，STMicroelectronics
STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。
得捷:
MOSFET 2N-CH 40V 60A POWERFLAT
欧时:
STMicroelectronics STripFET 系列 双 N沟道 MOSFET 晶体管 STL15DN4F5, 60 A, Vds=40 V, 8引脚 PowerFLAT封装
e络盟:
双路场效应管, MOSFET, N沟道, 40 V, 15 A, 0.008 ohm, PowerFLAT, 表面安装
艾睿:
Make an effective common gate amplifier using this STL15DN4F5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 60000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet v technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 40V 60A 8-Pin Power Flat T/R
富昌:
Dual N-Channel 40 V 9 mOhm STripFET V MosFet - PowerFLAT
Verical:
Trans MOSFET N-CH Si 40V 60A Automotive 8-Pin Power Flat T/R
DeviceMart:
MOSFET N-CH 40V 15A POWERFLAT
通道数 2
针脚数 5
漏源极电阻 0.008 Ω
极性 Dual N-Channel
耗散功率 60 W
阈值电压 2 V
漏源极电压Vds 40 V
连续漏极电流Ids 60A
上升时间 45 ns
输入电容Ciss 1550pF @25VVds
额定功率Max 60 W
下降时间 5 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 60 W
安装方式 Surface Mount
引脚数 8
封装 PowerVDFN-8
长度 4.75 mm
宽度 5.75 mm
高度 0.85 mm
封装 PowerVDFN-8
材质 Silicon
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17