N沟道40 V ， 1.4英里©典型值， 180 A的STripFET III功率MOSFET N-channel 40 V, 1.4 mΩ typ., 180 A STripFET III Power MOSFET
Looking for a component that can both amplify and switch between signals within your circuit? The power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 300000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with stripfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
极性 N-CH
耗散功率 300 W
漏源极电压Vds 40 V
连续漏极电流Ids 180A
上升时间 180 ns
输入电容Ciss 7400pF @25VVds
额定功率Max 300 W
下降时间 45 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free