IGBT 分立，STMicroelectronics### IGBT 分立件和模块，STMicroelectronics绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
IGBT 分立，STMicroelectronics
### IGBT 分立件和模块，STMicroelectronics
绝缘栅级双极性或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
得捷:
IGBT 390V 25A 125W DPAK
欧时:
STMicroelectronics IGBT, STGD20N40LZ, 3引脚, DPAK TO-252封装, Vce=425 V, 25 A, 16V
艾睿:
The STGD20N40LZ IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 390Typ V. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
安富利:
Trans IGBT Chip N-CH 390V 25A 3-Pin DPAK T/R
Chip1Stop:
Trans IGBT Chip N-CH 390V 25A Automotive 3-Pin2+Tab DPAK T/R
Win Source:
IGBT 390V 25A 125W DPAK / IGBT 390 V 25 A 125 W Surface Mount DPAK