N 通道 STripFET™ DeepGate™,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ DeepGate™,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 30V 90A POWERFLAT
欧时:
STMicroelectronics DeepGate, STripFET 系列 N沟道 MOSFET 晶体管 STL90N3LLH6, 90 A, Vds=30 V, 8引脚
艾睿:
Compared to traditional transistors, STL90N3LLH6 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 60000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 30V 90A 8-Pin Power Flat T/R
Chip1Stop:
Trans MOSFET N-CH 30V 90A 8-Pin Power Flat T/R
Verical:
Trans MOSFET N-CH 30V 90A 8-Pin Power Flat T/R
DeviceMart:
MOSFET N-CH 30V 24A POWERFLAT5X6
Win Source:
MOSFET N-CH 30V 24A POWERFLAT5X6
通道数 1
漏源极电阻 0.0038 Ω
极性 N-Channel
耗散功率 60 W
阈值电压 1.7 V
漏源极电压Vds 30 V
连续漏极电流Ids 90A
上升时间 30 ns
输入电容Ciss 1690pF @25VVds
额定功率Max 60 W
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 60W Tc
安装方式 Surface Mount
引脚数 8
封装 PowerVDFN-8
长度 5 mm
宽度 6 mm
高度 0.78 mm
封装 PowerVDFN-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STL90N3LLH6 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STL25N15F4 意法半导体 | 类似代替 | STL90N3LLH6和STL25N15F4的区别 |
FDMS7670 飞兆/仙童 | 功能相似 | STL90N3LLH6和FDMS7670的区别 |
FDMS8670S 飞兆/仙童 | 功能相似 | STL90N3LLH6和FDMS8670S的区别 |