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N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics
### MOSFET ,STMicroelectronics
立创商城:
N沟道 500V 7.2A
得捷:
MOSFET N-CH 500V 7.2A D2PAK
欧时:
### N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
e络盟:
STMICROELECTRONICS STB9NK50ZT4 晶体管, MOSFET, N沟道, 7.2 A, 500 V, 0.72 ohm, 10 V, 3.75 V
艾睿:
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the STB9NK50ZT4 power MOSFET. Its maximum power dissipation is 110000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh technology.
安富利:
Trans MOSFET N-CH 500V 7.2A 3-Pin2+Tab D2PAK T/R
Chip1Stop:
Trans MOSFET N-CH 500V 7.2A 3-Pin2+Tab D2PAK T/R
TME:
Transistor: N-MOSFET; unipolar; 500V; 4.5A; 110W; D2PAK
Verical:
Trans MOSFET N-CH 500V 7.2A 3-Pin2+Tab D2PAK T/R
Win Source:
MOSFET N-CH 500V 7.2A D2PAK
额定电压DC 500 V
额定电流 7.20 A
针脚数 3
漏源极电阻 0.72 Ω
极性 N-Channel
耗散功率 110 W
阈值电压 3.75 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 7.20 A
上升时间 20 ns
输入电容Ciss 910pF @25VVds
额定功率Max 110 W
下降时间 22 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 110W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.4 mm
宽度 9.35 mm
高度 4.6 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STB9NK50ZT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FQB9N50CTM 飞兆/仙童 | 功能相似 | STB9NK50ZT4和FQB9N50CTM的区别 |
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IRF840ASPBF 威世 | 功能相似 | STB9NK50ZT4和IRF840ASPBF的区别 |