N沟道600 V , 13 A, TO- 220 , TO- 220FP , TO- 247 , D2PAK第二代的MDmesh ™功率MOSFET N-channel 600 V, 13 A, TO-220, TO-220FP, TO-247, D2PAK second generation MDmesh™ Power MOSFET
N-Channel 600V 13A Tc 110W Tc Surface Mount D2PAK
得捷:
MOSFET N-CH 600V 13A D2PAK
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STB18NM60N power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 80000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes mdmesh ii technology.
Chip1Stop:
Trans MOSFET N-CH 600V 13A 3-Pin2+Tab D2PAK T/R
力源芯城:
600V,13A,N沟道MOSFET
漏源极电阻 0.26 Ω
极性 N-Channel
耗散功率 110 W
阈值电压 3 V
漏源极电压Vds 600 V
连续漏极电流Ids 13A
上升时间 15 ns
输入电容Ciss 1000pF @50VVds
额定功率Max 110 W
下降时间 25 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 110W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17