N 通道 STripFET™ H7 系列，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics
N 通道 STripFET™ H7 系列，STMicroelectronics
STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。
得捷:
MOSFET N CH 100V 110A H2PAK
欧时:
### N 通道 STripFET™ H7 系列，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics&s; STH110N10F7-2 power MOSFET can provide a solution. Its maximum power dissipation is 150000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes stripfet technology. This N channel MOSFET transistor operates in enhancement mode.
Chip1Stop:
Trans MOSFET N-CH 100V 110A 3-Pin2+Tab H2PAK T/R
Verical:
Trans MOSFET N-CH 100V 110A 3-Pin2+Tab H2PAK T/R
DeviceMart:
MOSFET N CH 100V 110A H2PAK
通道数 1
极性 N-CH
耗散功率 150 W
阈值电压 2V ~ 4V
漏源极电压Vds 100 V
连续漏极电流Ids 110A
上升时间 36 ns
输入电容Ciss 5117pF @50VVds
下降时间 21 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 150W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 15.8 mm
宽度 10.4 mm
高度 4.8 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free