STB120N4LF6

STMICROELECTRONICS  STB120N4LF6  晶体管, MOSFET, N沟道, 80 A, 40 V, 3100 µohm, 10 V, 1 V

表面贴装型 N 通道 40 V 80A（Tc） 110W（Tc） D2PAK

得捷:
MOSFET N-CH 40V 80A D2PAK

贸泽:
MOSFET N-Ch 40V 3.1 Ohm STripFET VI DeepGATE

艾睿:
Create an effective common drain amplifier using this STB120N4LF6 power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with stripfet vi technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

Chip1Stop:
Trans MOSFET N-CH 40V 80A Automotive 3-Pin2+Tab D2PAK T/R

Verical:
Trans MOSFET N-CH 40V 80A Automotive 3-Pin2+Tab D2PAK T/R

力源芯城:
40V,80A,N沟道MOSFET

Win Source:
MOSFET N-CH 40V 80A D2PAK