STGD6NC60HD 系列 N沟道 600 V 7 A 极快 PowerMESH IGBT - TO-252-3
This IGBT transistor from STMicroelectronics will work perfectly in your circuit. Its maximum power dissipation is 56000 mW. It has a maximum collector emitter voltage of 600 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
额定电压DC 600 V
额定电流 15.0 A
针脚数 3
耗散功率 56 W
击穿电压集电极-发射极 600 V
反向恢复时间 21 ns
额定功率Max 56 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 56000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STGD6NC60HDT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IRG4RC10SDPBF 国际整流器 | 功能相似 | STGD6NC60HDT4和IRG4RC10SDPBF的区别 |
IRG4RC10SDTRPBF 国际整流器 | 功能相似 | STGD6NC60HDT4和IRG4RC10SDTRPBF的区别 |