STB11N52K3

STMICROELECTRONICS  STB11N52K3  晶体管, MOSFET, N沟道, 10 A, 525 V, 0.41 ohm, 10 V, 3.75 V

表面贴装型 N 通道 525 V 10A（Tc） 125W（Tc） D2PAK

得捷:
MOSFET N-CH 525V 10A D2PAK

贸泽:
MOSFET N-channel 525 V 0.41 Ohm 10 A SuperMESH3

e络盟:
功率场效应管, MOSFET, N沟道, 525 V, 10 A, 0.41 ohm, TO-263 D2PAK, 表面安装

艾睿:
This STB11N52K3 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh 3 technology.

Chip1Stop:
Trans MOSFET N-CH 525V 10A 3-Pin2+Tab D2PAK T/R

力源芯城:
525V,0.41Ω,10A,N沟道功率MOSFET

DeviceMart:
MOSFET N-CH 525V 10A D2PAK