STGD3NB60H 系列 600 V 3 A N 沟道 Power Mesh IGBT - D2PAK
You won"t need to worry about any lagging in your circuit with this IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 48000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This IGBT transistor has a minimum operating temperature of -65 °C and a maximum of 175 °C. It is made in a single configuration.
额定电压DC 600 V
额定电流 3.00 A
耗散功率 48000 mW
上升时间 150 µs
击穿电压集电极-发射极 600 V
反向恢复时间 1.7 µs
额定功率Max 48 W
工作温度Max 175 ℃
工作温度Min -65 ℃
耗散功率Max 48000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
宽度 6.2 mm
封装 TO-252-3
工作温度 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STGD3NB60SDT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STGD3NB60SD 意法半导体 | 完全替代 | STGD3NB60SDT4和STGD3NB60SD的区别 |
FGD3N60LSDTM 飞兆/仙童 | 功能相似 | STGD3NB60SDT4和FGD3N60LSDTM的区别 |
HGTD3N60C3S9A 飞兆/仙童 | 功能相似 | STGD3NB60SDT4和HGTD3N60C3S9A的区别 |