30V,14mΩ,35A,N沟道功率MOSFET
As an alternative to traditional transistors, the power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 35000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
极性 N-CH
耗散功率 35 W
漏源极电压Vds 30 V
连续漏极电流Ids 35A
上升时间 4 ns
输入电容Ciss 725pF @25VVds
额定功率Max 35 W
下降时间 3.5 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 35W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
高度 2.4 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STD35N3LH5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FDD6030BL 飞兆/仙童 | 功能相似 | STD35N3LH5和FDD6030BL的区别 |
BUK9214-30A,118 恩智浦 | 功能相似 | STD35N3LH5和BUK9214-30A,118的区别 |