





N 通道 STripFET™ DeepGate™,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ DeepGate™,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 40V 180A H2PAK-2
欧时:
### N 通道 STripFET™ DeepGate™,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
艾睿:
Create an effective common drain amplifier using this STH400N4F6-2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 300000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with stripfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
安富利:
Trans MOSFET N-CH 40V 180A 3-Pin H2PAK T/R
Chip1Stop:
Trans MOSFET N-CH 40V 180A Automotive 3-Pin2+Tab H2PAK T/R
Verical:
Trans MOSFET N-CH 40V 180A Automotive 3-Pin2+Tab H2PAK T/R
儒卓力:
**N-CH 40V 180A 1,15mOhm H2PAK-2 **
极性 N-CH
耗散功率 300 W
阈值电压 4.5 V
漏源极电压Vds 40 V
连续漏极电流Ids 180A
输入电容Ciss 20000pF @25VVds
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300 W
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 10.4 mm
宽度 15.8 mm
高度 4.8 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99