













STMICROELECTRONICS STW17N62K3 功率场效应管, MOSFET, N沟道, 15.5 A, 620 V, 0.28 ohm, 10 V, 3.75 V
N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 620V 15.5A TO247-3
欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 Si N沟道 MOSFET 晶体管 STW17N62K3, 15.5 A, Vds=620 V, 3引脚
贸泽:
MOSFET N-Ch 620V .34 Ohm 15A SuperMESH3
e络盟:
# STMICROELECTRONICS STW17N62K3 功率场效应管, MOSFET, N沟道, 15.5 A, 620 V, 0.28 ohm, 10 V, 3.75 V
艾睿:
As an alternative to traditional transistors, the STW17N62K3 power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 190000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh 3 technology.
力源芯城:
620V,15.5A,N沟道MOSFET
Win Source:
MOSFET N-CH 620V 15A TO-247
针脚数 3
漏源极电阻 0.28 Ω
极性 N-Channel
耗散功率 190 W
阈值电压 3.75 V
漏源极电压Vds 620 V
连续漏极电流Ids 15.5A
上升时间 29 ns
输入电容Ciss 2500pF @50VVds
额定功率Max 190 W
下降时间 62 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 190W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.75 mm
宽度 5.15 mm
高度 20.15 mm
封装 TO-247-3
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STW17N62K3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP17N62K3 意法半导体 | 完全替代 | STW17N62K3和STP17N62K3的区别 |