STMICROELECTRONICS STH315N10F7-2 晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0021 ohm, 10 V, 3.5 V
表面贴装型 N 通道 100 V 180A（Tc） 315W（Tc） H2Pak-2
得捷:
MOSFET N-CH 100V 180A H2PAK-2
e络盟:
STMICROELECTRONICS STH315N10F7-2 晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0021 ohm, 10 V, 3.5 V
艾睿:
Create an effective common drain amplifier using this STH315N10F7-2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 315000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet technology.
安富利:
Trans MOSFET N-CH 100V 180A 3-Pin H2PAK T/R
Verical:
Trans MOSFET N-CH 100V 180A Automotive 3-Pin2+Tab H2PAK T/R
Win Source:
MOSFET N-CH 100V 180A H2PAK-2
针脚数 3
漏源极电阻 0.0021 Ω
极性 N-Channel
耗散功率 315 W
阈值电压 3.5 V
漏源极电压Vds 100 V
连续漏极电流Ids 180A
上升时间 108 ns
输入电容Ciss 12800pF @25VVds
下降时间 40 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 315W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Automotive, 车用, Industrial, Power Management
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
