STGD7NC60H 系列 600 V 14 A N 沟道 极快速 PowerMESH IGBT - TO-252
This fast-switching IGBT transistor from STMicroelectronics will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 70000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
额定电压DC 600 V
额定电流 7.00 A
针脚数 3
耗散功率 70 W
输入电容 720 pF
上升时间 8.50 ns
击穿电压集电极-发射极 600 V
热阻 100 ℃/W
额定功率Max 70 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 70000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STGD7NC60HT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STGD7NC60H 意法半导体 | 完全替代 | STGD7NC60HT4和STGD7NC60H的区别 |
HGTD7N60C3S9A 飞兆/仙童 | 功能相似 | STGD7NC60HT4和HGTD7N60C3S9A的区别 |