STI14NM50N

STI14NM50N图片1
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STI14NM50N概述

N沟道500 V, 0.28 I©典型值,12为MDmeshâ ?? ¢ II功率MOSFET在D²PAK , DPAK , TO- 220FP , I²PAK和TO- 220封装 N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK and TO-220 packages

通孔 N 通道 12A(Tc) 90W(Tc) I2PAK(TO-262)


得捷:
MOSFET N CH 500V 12A I2PAK


艾睿:
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the STI14NM50N power MOSFET. Its maximum power dissipation is 90000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh ii technology.


力源芯城:
500V,0.28Ω,12A,N沟道功率MOSFET


DeviceMart:
MOSFET N CH 500V 12A I2PAK


STI14NM50N中文资料参数规格
技术参数

耗散功率 90W Tc

上升时间 16 ns

输入电容Ciss 816pF @50VVds

下降时间 22 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 90W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-262-3

外形尺寸

封装 TO-262-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

数据手册

在线购买STI14NM50N
型号: STI14NM50N
描述:N沟道500 V, 0.28 I©典型值,12为MDmeshâ ?? ¢ II功率MOSFET在D²PAK , DPAK , TO- 220FP , I²PAK和TO- 220封装 N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK and TO-220 packages

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