STMICROELECTRONICS STS11N3LLH5 晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0117 ohm, 10 V, 1 V
The is a N-channel Power MOSFET developed using STMicroelectronics STripFET™V technology. The device has been optimized to achieve very low ON-state resistance, contributing to a FOM that is among the best in its class.
- .
- RDS ON x Qg industry benchmark
- .
- Extremely low ON-resistance RDS ON
- .
- Very low switching gate charge
- .
- High avalanche ruggedness
- .
- Low gate drive power losses
- .
- -55 to 150°C Operating junction temperature range
针脚数 8
漏源极电阻 0.0117 Ω
极性 N-Channel
耗散功率 2.7 W
阈值电压 1 V
漏源极电压Vds 30 V
输入电容Ciss 724pF @25VVds
额定功率Max 2.7 W
工作温度Max 150 ℃
耗散功率Max 2.7W Tc
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 Power Management, 电源管理, Industrial, 工业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STS11N3LLH5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STS9NF30L 意法半导体 | 类似代替 | STS11N3LLH5和STS9NF30L的区别 |
STS12N3LLH5 意法半导体 | 功能相似 | STS11N3LLH5和STS12N3LLH5的区别 |
IRF7807D2 国际整流器 | 功能相似 | STS11N3LLH5和IRF7807D2的区别 |