N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics
得捷:
MOSFET N-CH 800V 6.2A TO220AB
立创商城:
N沟道 800V 6.2A
欧时:
### N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
贸泽:
MOSFET N-Ch 800 Volt 6.2Amp Zener SuperMESH
艾睿:
Use STMicroelectronics&s; STP8NK80Z power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 140000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 800V 6.2A 3-Pin3+Tab TO-220 Tube
TME:
Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3
Verical:
Trans MOSFET N-CH 800V 6.2A 3-Pin3+Tab TO-220AB Tube
Win Source:
MOSFET N-CH 800V 6.2A TO-220
额定电压DC 800 V
额定电流 6.20 A
漏源极电阻 1.50 Ω
极性 N-Channel
耗散功率 140 W
漏源极电压Vds 800 V
漏源击穿电压 800 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 6.20 A
上升时间 30 ns
输入电容Ciss 1320pF @25VVds
额定功率Max 140 W
下降时间 28 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 140W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP8NK80Z ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FQP8N80C 飞兆/仙童 | 功能相似 | STP8NK80Z和FQP8N80C的区别 |
FQP7N80 飞兆/仙童 | 功能相似 | STP8NK80Z和FQP7N80的区别 |