STMICROELECTRONICS STD5N95K3 功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
The is a SuperMESH3™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics" SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low ON-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
通道数 1
针脚数 3
漏源极电阻 3 Ω
极性 N-Channel
耗散功率 90 W
阈值电压 4 V
漏源极电压Vds 950 V
漏源击穿电压 950 V
连续漏极电流Ids 4A
上升时间 7 ns
输入电容Ciss 460pF @25VVds
额定功率Max 90 W
下降时间 18 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 工业, Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17