N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics
N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics
得捷:
MOSFET N-CH 800V 19.5A D2PAK
欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STB25N80K5, 19.5 A, Vds=800 V, 3引脚
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STB25N80K5 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 250000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 800V 19.5A 3-Pin D2PAK T/R
富昌:
STB25N80K5 系列 N 沟道 800 V 0.26 Ohm SUPERMesh™5 功率 Mosfet - D2PAK
Chip1Stop:
Trans MOSFET N-CH 800V 19.5A 3-Pin2+Tab D2PAK T/R
Verical:
Trans MOSFET N-CH 800V 19.5A 3-Pin2+Tab D2PAK T/R
极性 N-CH
耗散功率 250 W
漏源极电压Vds 800 V
连续漏极电流Ids 19.5A
上升时间 13 ns
输入电容Ciss 1600pF @100VVds
额定功率Max 250 W
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 250W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10 mm
宽度 8.95 mm
高度 4.4 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
