




N沟道650 V, 0.56 Ω , 7的的MDmesh ? V功率MOSFET N-channel 650 V, 0.56 Ω, 7 A MDmesh? V Power MOSFET
通孔 N 通道 650 V 7A(Tc) 70W(Tc) I2PAK
得捷:
MOSFET N-CH 650V 7A I2PAK
贸泽:
MOSFET N-channel 650 V 0.56 Ohm, 7A MDmesh
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STI8N65M5 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 70000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes mdmesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
DeviceMart:
MOSFET N-CH 650V 7A I2PAK
极性 N-Channel
耗散功率 70 W
漏源极电压Vds 650 V
上升时间 14 ns
输入电容Ciss 690pF @100VVds
下降时间 11 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Through Hole
引脚数 3
封装 TO-262-3
封装 TO-262-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STI8N65M5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STU8N65M5 意法半导体 | 完全替代 | STI8N65M5和STU8N65M5的区别 |
STI21N65M5 意法半导体 | 类似代替 | STI8N65M5和STI21N65M5的区别 |
STI12N65M5 意法半导体 | 类似代替 | STI8N65M5和STI12N65M5的区别 |