STF31N65M5

650V,22A,N沟道MOSFET

N 通道 MDmesh™ M5 系列，STMicroelectronics

MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。

### MOSFET ，STMicroelectronics

得捷:
MOSFET N-CH 650V 22A TO220FP

欧时:
STMicroelectronics MDmesh M5 系列 Si N沟道 MOSFET STF31N65M5, 22 A, Vds=710 V, 3引脚 TO-220FP封装

艾睿:
Compared to traditional transistors, STF31N65M5 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 30000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes mdmesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 650V 22A 3-Pin3+Tab TO-220FP Tube

富昌:
STF31N65M5 系列 N 沟道 710 V 0.148 Ohm MDmesh V 功率 MosFet - TO-220FP

Chip1Stop:
Trans MOSFET N-CH 650V 22A 3-Pin3+Tab TO-220FP Tube

Verical:
Trans MOSFET N-CH 650V 22A 3-Pin3+Tab TO-220FP Tube

儒卓力:
**N-CH 650V 22A 148mOhm TO220FP **

力源芯城:
650V,22A,N沟道MOSFET