N 通道 MDmesh™,600V/650V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™,600V/650V,STMicroelectronics
### MOSFET ,STMicroelectronics
欧时:
STMicroelectronics MDmesh 系列 Si N沟道 MOSFET STD7NM60N, 5 A, Vds=600 V, 3引脚 DPAK TO-252封装
立创商城:
N沟道 600V 5A
得捷:
MOSFET N-CH 600V 5A DPAK
e络盟:
STMICROELECTRONICS STD7NM60N 功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
艾睿:
If you need to either amplify or switch between signals in your design, then STMicroelectronics&s; STD7NM60N power MOSFET is for you. Its maximum power dissipation is 45000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes mdmesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 600V 5A 3-Pin2+Tab DPAK T/R
富昌:
单 N-沟道 600 V 0.9 Ohm 14 nC 45 W 硅 表面贴装 Mosfet - TO-252-3
TME:
Transistor: N-MOSFET; unipolar; 600V; 3A; 45W; DPAK
Verical:
Trans MOSFET N-CH 600V 5A 3-Pin2+Tab DPAK T/R
儒卓力:
**N-CH 600V 5A 900mOhm TO252-3 **
力源芯城:
600V,5A,0.84Ω,N沟道功率MOSFET
DeviceMart:
MOSFET N-CH 600V 5A DPAK
Win Source:
MOSFET N-CH 600V 5A DPAK
针脚数 3
漏源极电阻 0.84 Ω
极性 N-Channel
耗散功率 45 W
阈值电压 3 V
输入电容 363 pF
漏源极电压Vds 600 V
上升时间 10 ns
输入电容Ciss 363pF @50VVds
额定功率Max 45 W
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 45W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STD7NM60N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD18N55M5 意法半导体 | 类似代替 | STD7NM60N和STD18N55M5的区别 |
STD15NF10T4 意法半导体 | 类似代替 | STD7NM60N和STD15NF10T4的区别 |
STD60NF06T4 意法半导体 | 类似代替 | STD7NM60N和STD60NF06T4的区别 |