N沟道30 V ， 2.4 MI © ， 80 A， DPAK ， DPAK STripFETVI DeepGATE功率MOSFET N-channel 30 V, 2.4 mΩ , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET
This power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 110000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
极性 N-Channel
耗散功率 110 W
漏源极电压Vds 30 V
上升时间 85 ns
输入电容Ciss 3800pF @25VVds
额定功率Max 110 W
下降时间 40 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 110W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STB155N3LH6 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD155N3LH6 意法半导体 | 完全替代 | STB155N3LH6和STD155N3LH6的区别 |
IPD70N03S4L-04 英飞凌 | 功能相似 | STB155N3LH6和IPD70N03S4L-04的区别 |