













N 通道 STripFET™ DeepGate™,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ DeepGate™,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
得捷:
MOSFET N-CH 60V 80A DPAK
欧时:
### N 通道 STripFET™ DeepGate™,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
贸泽:
MOSFET N-CH 60V 80A STripFET VI DeepGATE
艾睿:
Amplify electronic signals and switch between them with the help of STMicroelectronics&s; STD80N6F6 power MOSFET. Its maximum power dissipation is 120000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with stripfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
安富利:
Trans MOSFET N-CH 60V 80A 3-Pin DPAK T/R
富昌:
N-Channel 60 V 80 A 6.5 mΩ 120 W SMT STripFET DeepGATE Power Mosfet - TO-252-3
Chip1Stop:
Trans MOSFET N-CH 60V 80A Automotive 3-Pin2+Tab DPAK T/R
TME:
Transistor: N-MOSFET; unipolar; 60V; 80A; 120W; DPAK
Verical:
Trans MOSFET N-CH 60V 80A Automotive 3-Pin2+Tab DPAK T/R
儒卓力:
**N-CH 60V 80A 5mOhm TO252 **
Win Source:
MOSFET N-CH 60V DPAK
极性 N-CH
耗散功率 120 W
漏源极电压Vds 60 V
连续漏极电流Ids 80A
输入电容Ciss 7480pF @25VVds
额定功率Max 120 W
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 120W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 10.4 mm
宽度 9.35 mm
高度 4.6 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99