






STMICROELECTRONICS STP3NK100Z 功率场效应管, MOSFET, N沟道, 2.5 A, 1 kV, 5.4 ohm, 10 V, 3.75 V
通孔 N 通道 2.5A(Tc) 90W(Tc) TO-220AB
得捷:
MOSFET N-CH 1000V 2.5A TO220AB
贸泽:
MOSFET 1000V 5.4Ohm 2.5A Zener SuperMESH
e络盟:
STMICROELECTRONICS STP3NK100Z 功率场效应管, MOSFET, N沟道, 2.5 A, 1 kV, 5.4 ohm, 10 V, 3.75 V
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STP3NK100Z power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 90000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes supermesh technology.
安富利:
Trans MOSFET N-CH 1KV 2.5A 3-Pin3+Tab TO-220 Tube
富昌:
STP3NK100Z 系列 1000V 6 Ohm N 沟道 齐纳-保护 SuperMESH™ Mosfet TO-220
Chip1Stop:
Trans MOSFET N-CH 1KV 2.5A 3-Pin3+Tab TO-220 Tube
通道数 1
针脚数 3
漏源极电阻 5.4 Ω
极性 N-Channel
耗散功率 90 W
阈值电压 3.75 V
漏源极电压Vds 1000 V
漏源击穿电压 1000 V
连续漏极电流Ids 12.5 A
上升时间 7.5 ns
输入电容Ciss 601pF @25VVds
额定功率Max 90 W
下降时间 32 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 9.15 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP3NK100Z ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IRFBG30PBF 威世 | 功能相似 | STP3NK100Z和IRFBG30PBF的区别 |
IRFBG20PBF 威世 | 功能相似 | STP3NK100Z和IRFBG20PBF的区别 |
IRFBG30 威世 | 功能相似 | STP3NK100Z和IRFBG30的区别 |