






N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics
得捷:
MOSFET N-CH 1000V 1.85A IPAK
欧时:
### N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
艾睿:
Make an effective common gate amplifier using this STU2NK100Z power MOSFET from STMicroelectronics. Its maximum power dissipation is 70000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes supermesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 1KV 1.85A 3-Pin3+Tab IPAK Tube
Chip1Stop:
Trans MOSFET N-CH 1KV 1.85A 3-Pin3+Tab IPAK Tube
TME:
Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; IPAK
Verical:
Trans MOSFET N-CH 1KV 1.85A 3-Pin3+Tab IPAK Tube
Win Source:
MOSFET N-CH 1000V 1.85A IPAK / N-Channel 1000 V 1.85A Tc 70W Tc Through Hole I-PAK
漏源极电阻 6.25 Ω
极性 N-Channel
耗散功率 70 W
阈值电压 3.75 V
漏源极电压Vds 1000 V
上升时间 6.5 ns
输入电容Ciss 499pF @25VVds
下降时间 32.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.6 mm
宽度 2.4 mm
高度 6.9 mm
封装 TO-251-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STU2NK100Z ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP2NK100Z 意法半导体 | 完全替代 | STU2NK100Z和STP2NK100Z的区别 |