STD2NK60Z-1

STMICROELECTRONICS  STD2NK60Z-1  功率场效应管, MOSFET, N沟道, 1.4 A, 600 V, 8 ohm, 10 V, 3.75 V

N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics

得捷:
MOSFET N-CH 600V 1.4A IPAK

欧时:
STMicroelectronics MDmesh, SuperMESH 系列 N沟道 MOSFET 晶体管 STD2NK60Z-1, 1.4 A, Vds=600 V, 3引脚 TO-251封装

e络盟:
晶体管, MOSFET, N沟道, 1.4 A, 600 V, 8 ohm, 10 V, 3.75 V

艾睿:
Compared to traditional transistors, STD2NK60Z-1 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 45000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with supermesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 1.4A 3-Pin3+Tab IPAK Tube

Chip1Stop:
Trans MOSFET N-CH 600V 1.4A 3-Pin3+Tab IPAK Tube

Win Source:
MOSFET N-CH 600V 1.4A IPAK