STMICROELECTRONICS STD4NK50Z-1 晶体管, MOSFET, N沟道, 1.5 A, 500 V, 2.3 ohm, 10 V, 3.75 V
The is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
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- 2.3R RDS ON
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- Extremely high dV/dt capability
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- 100% Avalanche tested
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- Gate charge minimized
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- Very low intrinsic capacitances
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- Very good manufacturing repeatability
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- -55 to 150°C Operating junction temperature range
额定功率 45 W
通道数 1
针脚数 3
漏源极电阻 2.3 Ω
极性 N-Channel
耗散功率 45 W
阈值电压 3.75 V
漏源极电压Vds 500 V
连续漏极电流Ids 1.50 A
上升时间 7 ns
输入电容Ciss 310pF @25VVds
额定功率Max 45 W
下降时间 11 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 45W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.6 mm
宽度 2.4 mm
高度 6.2 mm
封装 TO-251-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Lighting, Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STD4NK50Z-1 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP60NF06 意法半导体 | 功能相似 | STD4NK50Z-1和STP60NF06的区别 |
STW20NK50Z 意法半导体 | 功能相似 | STD4NK50Z-1和STW20NK50Z的区别 |
STP5NK100Z 意法半导体 | 功能相似 | STD4NK50Z-1和STP5NK100Z的区别 |