STMICROELECTRONICS STD2NK90Z-1 功率场效应管, MOSFET, N沟道, 1.05 A, 900 V, 5 ohm, 10 V, 3.75 V
The is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
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- Extremely high dV/dt capability
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- 100% Avalanche tested
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- Improved ESD capability
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- Very low intrinsic capacitance
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- Very good manufacturing repeatability
通道数 1
针脚数 3
漏源极电阻 5 Ω
极性 N-Channel
耗散功率 70 W
阈值电压 3.75 V
漏源极电压Vds 900 V
连续漏极电流Ids 1.05 A
上升时间 11 ns
输入电容Ciss 485pF @25VVds
额定功率Max 70 W
下降时间 40 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.6 mm
宽度 2.4 mm
高度 6.2 mm
封装 TO-251-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, 电源管理, 工业, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STD2NK90Z-1 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FQU2N90TU 飞兆/仙童 | 功能相似 | STD2NK90Z-1和FQU2N90TU的区别 |
FQU2N90 飞兆/仙童 | 功能相似 | STD2NK90Z-1和FQU2N90的区别 |