




N沟道 650V 12A
通孔 N 通道 12A(Tc) 90W(Tc) I-PAK
立创商城:
N沟道 650V 12A
得捷:
MOSFET N-CH 650V 12A IPAK
贸泽:
MOSFET N-CH 65V 12A MDMESH
艾睿:
As an alternative to traditional transistors, the STU16N65M5 power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 90000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes mdmesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
漏源极电阻 0.23 Ω
极性 N-Channel
耗散功率 25 W
阈值电压 4 V
漏源极电压Vds 650 V
连续漏极电流Ids 12A
上升时间 7 ns
输入电容Ciss 1250pF @100VVds
下降时间 8 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.6 mm
宽度 2.4 mm
高度 6.2 mm
封装 TO-251-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 无铅
REACH SVHC版本 2015/12/17



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STU16N65M5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP16N65M5 意法半导体 | 完全替代 | STU16N65M5和STP16N65M5的区别 |
IPP60R299CP 英飞凌 | 功能相似 | STU16N65M5和IPP60R299CP的区别 |
STW16N65M5 意法半导体 | 功能相似 | STU16N65M5和STW16N65M5的区别 |