INFINEON SPB21N50C3ATMA1 晶体管, MOSFET, N沟道, 21 A, 500 V, 0.16 ohm, 10 V, 3 V
表面贴装型 N 通道 21A（Tc） 208W（Tc） PG-TO263-3-2
得捷:
MOSFET N-CH 560V 21A TO263-3
立创商城:
N沟道 560V 21A
贸泽:
MOSFET HIGH POWER_LEGACY
e络盟:
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.16 ohm, 10 V, 3 V
艾睿:
Increase the current or voltage in your circuit with this SPB21N50C3ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 208000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with coolmos technology.
Verical:
Trans MOSFET N-CH 500V 21A 3-Pin2+Tab D2PAK T/R
Newark:
# INFINEON SPB21N50C3ATMA1 MOSFET Transistor, N Channel, 21 A, 500 V, 0.16 ohm, 10 V, 3 V
额定电压DC 560 V
额定电流 21.0 A
针脚数 3
漏源极电阻 0.16 Ω
极性 N-Channel
耗散功率 208 W
阈值电压 3 V
输入电容 2.40 nF
栅电荷 95.0 nC
漏源极电压Vds 500 V
连续漏极电流Ids 21.0 A
上升时间 5 ns
输入电容Ciss 2400pF @25VVds
下降时间 4.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 208000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-3
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 电源管理, Consumer Electronics, 消费电子产品, Power Management, Communications & Networking, 通信与网络
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17