SMBT3904E6433HTMA1

双极晶体管 - 双极结型晶体管BJT NPN Silicon Switch TRANSISTOR

Bipolar BJT Transistor NPN 40V 200mA 300MHz 330mW Surface Mount SOT-23-3

得捷:
TRANS NPN 40V 0.2A SOT23

贸泽:
双极晶体管 - 双极结型晶体管BJT NPN Silicon Switch TRANSISTOR

艾睿:
Use this versatile NPN SMBT3904E6433HTMA1 GP BJT from Infineon Technologies to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

Chip1Stop:
Trans GP BJT NPN 40V 0.2A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 40V 0.2A 330mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS NPN 40V 0.2A SOT23 / Bipolar BJT Transistor NPN 40 V 200 mA 300MHz 330 mW Surface Mount PG-SOT23