SN7002NH6327XTSA2

SN7002N 系列 60 V 5 Ohm N沟道 SIPMOS® 小信号-晶体管 - PG-SOT-23

Summary of Features:

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Enhancement mode

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Avalanche rated

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Pb-free lead plating; RoHS compliant

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Qualified according to AEC Q101

立创商城:
SN7002NH6327XTSA2

得捷:
MOSFET N-CH 60V 200MA SOT23-3

欧时:
Infineon MOSFET SN7002NH6327XTSA2

贸泽:
MOSFET N-Ch 60V 200mA SOT-23-3

e络盟:
INFINEON  SN7002NH6327XTSA2  晶体管, MOSFET, BRT, N沟道, 200 mA, 60 V, 2.5 ohm, 10 V, 1.4 V

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; SN7002NH6327XTSA2 power MOSFET is for you. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with sipmos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R

Chip1Stop:
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23

Verical:
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R

Win Source:
MOSFET N-CH 60V 200MA SOT23