SPD30P06PGBTMA1

INFINEON  SPD30P06PGBTMA1  晶体管, MOSFET, P沟道, -30 A, -60 V, 0.069 ohm, -10 V, -3 V

SIPMOS® P 通道 MOSFET

**Infineon** SIPMOS® 小信号 P 通道 MOSFET 具有多种功能，可能包括增强模式、连续漏极电流（约低至 80A）及宽工作温度范围。 SIPMOS 功率可用于多种应用，包括电信、eMobility、笔记本、直流/直流设备以及汽车工业。

· 符合 AEC Q101 标准（请参阅数据表）

· 无铅引线电镀，符合 RoHS 标准

欧时:
Infineon SIPMOS 系列 Si P沟道 MOSFET SPD30P06PGBTMA1, 30 A, Vds=60 V, 3引脚 DPAK TO-252封装

得捷:
MOSFET P-CH 60V 30A TO252-3

立创商城:
SPD30P06PGBTMA1

贸泽:
MOSFET P-Ch -60V -30A DPAK-2

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The SPD30P06PGBTMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology.

安富利:
Trans MOSFET P-CH 60V 30A 3-Pin2+Tab TO-252

Chip1Stop:
Trans MOSFET P-CH 60V 30A Automotive 3-Pin2+Tab DPAK T/R

TME:
Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3

Verical:
Trans MOSFET P-CH 60V 30A Automotive 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  SPD30P06PGBTMA1  MOSFET Transistor, P Channel, -30 A, -60 V, 0.069 ohm, -10 V, -3 V