S29GL128S10FAIV23

S29GL128S10FAIV23图片1
S29GL128S10FAIV23概述

IC FLASH MEM 128Mbit PAGE 64BGA

FLASH - NOR Memory IC 128Mb 8M x 16 Parallel 100ns 64-FBGA 13x11


立创商城:
S29GL128S10FAIV23


贸泽:
Flash Memory Nor


艾睿:
NOR Flash Parallel 3V/3.3V 128M-bit 8M x 16 100ns 64-Pin Fortified BGA T/R


安富利:
The Spansion® S29GL128S is MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.


Win Source:
IC FLASH 128MBIT PARALLEL 64FBGA / FLASH - NOR Memory IC 128Mb 8M x 16 Parallel 100 ns 64-FBGA 13x11


S29GL128S10FAIV23中文资料参数规格
封装参数

封装 LBGA-64

外形尺寸

封装 LBGA-64

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains lead

数据手册

在线购买S29GL128S10FAIV23
型号: S29GL128S10FAIV23
描述:IC FLASH MEM 128Mbit PAGE 64BGA

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