STGW50NB60H

STGW50NB60H概述

N沟道50A - 600V TO- 247的PowerMESH IGBT N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications <120kHz.

■ HIGH INPUT IMPEDANCE VOLTAGE DRIVEN

■ LOW ON-VOLTAGE DROP VCESAT

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ VERY HIGH FREQUENCY OPERATION

■ OFF LOSSES INCLUDE TAIL CURRENT

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ WELDING EQUIPMENTS

■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

STGW50NB60H中文资料参数规格
技术参数

极性 N-Channel

耗散功率 250 W

击穿电压集电极-发射极 600 V

工作温度Max 150 ℃

工作温度Min 65 ℃

封装参数

安装方式 Through Hole

封装 TO-247-3

外形尺寸

长度 15.75 mm

宽度 5.15 mm

高度 20.15 mm

封装 TO-247-3

其他

产品生命周期 Unknown

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买STGW50NB60H
型号: STGW50NB60H
制造商: ST Microelectronics 意法半导体
描述:N沟道50A - 600V TO- 247的PowerMESH IGBT N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT

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