S1MHE3/5AT

DIODE GEN PURP 1kV 1A DO214AC

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

  For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive, and telecommunication.