S29AL016M10BAI022

S29AL016M10BAI022概述

16 Megabit 2M x 8Bit/1M x 16Bit 3V-only Boot Sector Flash Memory Featuring MirrorBit„ Technology

General Description

The S29AL016M is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64 ball Fortified BGA, and 48 pin TSOP packages. The word-wide data x16 appears on DQ15–DQ0; the byte-wide x8 data appears on DQ7–DQ0. The device requires only a single 3.0 volt power supplyfor both read and write functions, designed to be programmed in-system with the standard system 3.0 volt VCC sup

ply. The device can also be programmed in standard EPROM programmers.The device offers access times of 90 and 100 ns. To eliminate bus contention the device has separate chip enable CE#, write enable WE# and output enable OE# controls.

S29AL016M10BAI022中文资料参数规格
封装参数

封装 TFBGA

外形尺寸

封装 TFBGA

其他

产品生命周期 Obsolete

数据手册

在线购买S29AL016M10BAI022
型号: S29AL016M10BAI022
制造商: Spansion 飞索半导体
描述:16 Megabit 2M x 8Bit/1M x 16Bit 3V-only Boot Sector Flash Memory Featuring MirrorBit„ Technology
替代型号S29AL016M10BAI022
型号/品牌 代替类型 替代型号对比

S29AL016M10BAI022

Spansion 飞索半导体

当前型号

当前型号

S29AL016M10BAI023

飞索半导体

功能相似

S29AL016M10BAI022和S29AL016M10BAI023的区别

S29AL016M10BFI022

飞索半导体

功能相似

S29AL016M10BAI022和S29AL016M10BFI022的区别

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