STGD3NB60HD

STGD3NB60HD概述

N沟道6A - 600V - DPAK封装的PowerMESH TM IGBT N-CHANNEL 6A - 600V - DPAK PowerMESH TM IGBT

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de

signed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding perfomances.

■ HIGH INPUT IMPEDANCE

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOW GATE CHARGE

■ HIGH FREQUENCY OPERATION

■ TYPICAL SHORT CIRCUIT WITHSTAND TIME

    5micro S-family, 4 micro H family

■ CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

STGD3NB60HD中文资料参数规格
封装参数

封装 TO-252

外形尺寸

封装 TO-252

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买STGD3NB60HD
型号: STGD3NB60HD
制造商: ST Microelectronics 意法半导体
描述:N沟道6A - 600V - DPAK封装的PowerMESH TM IGBT N-CHANNEL 6A - 600V - DPAK PowerMESH TM IGBT
替代型号STGD3NB60HD
型号/品牌 代替类型 替代型号对比

STGD3NB60HD

ST Microelectronics 意法半导体

当前型号

当前型号

HGT1S7N60C3D

Harris

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