STB5NC50-1

STB5NC50-1概述

N沟道500V - 1.3ohm - 5.5A TO- 220 / FP / D2PAK / I2PAK PowerMesh⑩II MOSFET N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET

DESCRIPTION

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron
.
area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate

charge and ruggedness.

■ TYPICAL RDSon = 1.3Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES SMPS

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES

STB5NC50-1中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 500 V

连续漏极电流Ids 5.5A

封装参数

封装 I2PAK

外形尺寸

封装 I2PAK

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买STB5NC50-1
型号: STB5NC50-1
制造商: ST Microelectronics 意法半导体
描述:N沟道500V - 1.3ohm - 5.5A TO- 220 / FP / D2PAK / I2PAK PowerMesh⑩II MOSFET N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET
替代型号STB5NC50-1
型号/品牌 代替类型 替代型号对比

STB5NC50-1

ST Microelectronics 意法半导体

当前型号

当前型号

SIHP5N50D-E3

Vishay Siliconix

功能相似

STB5NC50-1和SIHP5N50D-E3的区别

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