STB9NK60Z-1

STB9NK60Z-1概述

N沟道600V - 0.85ohm - 7A TO- 220 / FP / D2PAK / I2PAK齐纳保护SuperMESH⑩Power MOSFET N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip

based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series comple ments ST full range of high voltage MOSFETs in cluding revolutionary MDmesh™ products.

■TYPICAL RDSon = 0.85 Ω

■EXTREMELY HIGH dv/dt CAPABILITY

■IMPROVED ESD CAPABILITY

■100% AVALANCHE RATED

■GATE CHARGE MINIMIZED

■VERY LOW INTRINSIC CAPACITANCES

■VERY GOOD MANUFACTURING

REPEATIBILITY

STB9NK60Z-1中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 600 V

连续漏极电流Ids 7A

封装参数

封装 I2PAK

外形尺寸

封装 I2PAK

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买STB9NK60Z-1
型号: STB9NK60Z-1
制造商: ST Microelectronics 意法半导体
描述:N沟道600V - 0.85ohm - 7A TO- 220 / FP / D2PAK / I2PAK齐纳保护SuperMESH⑩Power MOSFET N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
替代型号STB9NK60Z-1
型号/品牌 代替类型 替代型号对比

STB9NK60Z-1

ST Microelectronics 意法半导体

当前型号

当前型号

STB6NK60Z-1

意法半导体

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