先进的功率MOSFET Advanced Power MOSFET
BVDSS = 700 V
RDSon = 1.8 W
ID = 6 A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA Max. @ VDS = 700V
Low RDSON : 1.552 W Typ.
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SSP6N70A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP7NK80Z 意法半导体 | 功能相似 | SSP6N70A和STP7NK80Z的区别 |
STP9NK70Z 意法半导体 | 功能相似 | SSP6N70A和STP9NK70Z的区别 |
FQP6N70 飞兆/仙童 | 功能相似 | SSP6N70A和FQP6N70的区别 |