SSS4N60B

600V N沟道MOSFET 600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

• 4.0A, 600V, RDSon= 2.5Ω@VGS= 10 V

• Low gate charge typical 22 nC

• Low Crss typical 14 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• TO-220F package isolation = 4.0kV Note 6