S29GL064A90TFIR70

MirrorBit Flash Family

64 Megabit, 32 Megabit 3.0, Volt-only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology

General Description

The S29GLxxxA family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64 Mb, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32 Mb, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics

Architectural Advantages

■ Single power supply operation

   — 3 volt read, erase, and program operations

■ Manufactured on 200 nm MirrorBit process technology

■ Secured Silicon Sector region

   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence

   — May be programmed and locked at the factory or by the customer

■ Flexible sector architecture

   — 64Mb uniform sector models: 128 32 Kword 64 KB sectors

   — 64Mb boot sector models: 127 32 Kword 64 KB sectors + 8 4Kword 8KB boot sectors

   — 32Mb uniform sector models: 64 32Kword 64KB sectors

   — 32Mb boot sector models: 63 32Kword 64KB sectors + 8 4Kword 8KB boot sectors

■ Compatibility with JEDEC standards

— Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection

■ 100,000 erase cycles typical per sector

■ 20-year data retention typical

Performance Characteristics

■ High performance

   — 90 ns access time

   — 4-word/8-byte page read buffer

   — 25 ns page read times

   — 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates

■ Low power consumption typical values at 3.0 V, 5MHz

   — 18 mA typical active read current

   — 50 mA typical erase/program current

   — 1 µA typical standby mode current

■ Package options

   — 48-pin TSOP

   — 56-pin TSOP

   — 64-ball Fortified BGA

   — 48-ball fine-pitch BGA

Software & Hardware Features

■ Software features

   — Program Suspend & Resume: read other sectors before programming operation is completed

   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed

   — Data# polling & toggle bits provide status

   — CFI Common Flash Interface compliant: allows host system to identify and accommodate multiple flash devices

   — Unlock Bypass Program command reduces overall multiple-word programming time

■ Hardware features

   — Sector Group Protection: hardware-level method of preventing write operations within a sector group

   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors

   — WP#/ACC input accelerates programming time when high voltage is applied for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models

   — Hardware reset input RESET# resets device

   — Ready/Busy# output RY/BY# detects program or erase cycle completion